Project overview
Project SiC is a phased industrial infrastructure project focused on high‑purity Silicon Carbide materials.
The scope includes crystal growth, wafer processing and epitaxy.
The project is designed as a long‑term industrial asset.
Project stage & SPV
The project is implemented through a dedicated special‑purpose vehicle (SPV).
All material decisions are milestone‑based and conditional.
This structure preserves execution discipline.
Strategic material
Silicon Carbide is a key material for next‑generation power electronics.
Europe remains structurally dependent in substrates and epitaxy.
Project SiC addresses this gap.
Manufacturing & integrated R&D
Manufacturing capability is developed in parallel with embedded R&D.
R&D supports qualification, yield optimisation and scale‑up.
This prevents fragmentation between innovation and execution.
Capital intensity
The project is capital‑intensive by design.
CAPEX is deployed in stages.
Capital discipline is embedded in the architecture.
Policy & regulation
Designed under European industrial policy and the Chips Act.
Focus on resilience and strategic autonomy.
Regulation is a design input.
Supply‑chain resilience
The project addresses structural gaps in the European SiC supply chain.
Key capabilities are anchored within the EU.
Resilience is architectural.
Governance architecture
Governance, compliance and financing form a unified system.
The project is prepared for institutional due diligence.
Infrastructure‑grade standards apply from day one.